Diodes ZVN2110A - Manual (Page 2)

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 4 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T amb =25°C I D 320 mA
Pulsed Drain Current I
DM
6 A
Gate Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
100 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V GS(th) 0.8 2.4 V ID=1mA, V DS = V GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
1
100 µ A
µ A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
1.5 A V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
4 Ω V
GS
=10V,I
D
=1A
Forward Transconductance
(1)(2) g
fs
250 mS V
DS
=25V,I
D
=1A
Input Capacitance (2) C
iss
75 pF
Common Source Output
Capacitance (2) C oss 25 pF V DS =25 V, V GS =0V, f=1MHz
Reverse Transfer
Capacitance (2) C
rss
8 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ 25V, I
D
=1A
Rise Time (2)(3) t
r
8 ns
Turn-Off Delay Time (2)(3) t
d(off)
13 ns
Fall Time (2)(3) t
f
13 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(
3
)
Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVN2110A
3-364
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
Transfer Characteristics
2 4 6 8 10 0 20 40 60 80 100
Saturation Characteristics
V DS-
Dr
ai
n S
o
u
rc
e
V
oltage (V
olts)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts) V GS- Gate Source Voltage (Volts)
V DS - Drain Source Voltage (Volts)
0 2 4 6 8 10
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
I D(
o
n )
-On-State Drain Current (Amps)
V DS= 10V
0
10
6
2
4
8
0 2 4 6 8 10
I D=
1A
500mA
100mA
I D(
o n
)
-On-State Drain Current (Amps)
I D(
o
n )
-On-State Drain Current (Amps)
Normalised R DS(on) and V GS(th) v Temperature
T j -Junction Temperature (°C)
Normalised R
D
S(o
n )
a
nd
V
G
S(
th
)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urce
R
es ista
nc
e R
DS(
on )
Gate Threshold Voltage V
GS(TH)
I D= 1 A
V GS= 10V
I D= 1mA
V GS= V DS
180
0
0.8
0.4
1.2
2.0
1.6 8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
V
GS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source voltage
V GS- Gate Source Voltage (Volts)
RDS(on
)-
D
ra
in So
u
rce
R
esis
tance
(
Ω )
1 10 100
500mA
I D =
1A
100mA
1
10
5
V GS=
10V
3V
10V
V DS= 25V
ZVN2110A