Diodes ZVN0545G - Manual

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - DECEMBER 1995 ✪
FEATURES
* 450 Volts V
DS
* R
DS(on)
= 50 Ω
* Ease of paralleling
PARTMARKING DETAIL – ZVN0545
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
450 V
Continuous Drain Current at T
amb
=25°C I
D
140 mA
Pulsed Drain Current I
DM
600 mA
Gate-Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
450 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
1 3 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
10
400 µ A
µ A
V
DS
=450 V, V
GS
=0
V
DS
=405 V, V
GS
=0V,
T=125°C (2)
On-State Drain Current(1) I
D(on)
150 mA V
DS
=25 V, V
GS
=10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
50 Ω V
GS
=10V,I
D
=100mA
Forward
Transconductance(1)(2) g
fs
100 mS V
DS
=25V,I
D
=100mA
Input Capacitance (2) C
iss
70 pF
Common Source Output
Capacitance (2) C
oss
10 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2) C
rss
4 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ 25V, I
D
=100mA
Rise Time (2)(3) t
r
7 ns
Turn-Off Delay Time (2)(3) t
d(off)
16 ns
Fall Time (2)(3) t
f
10 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
ZVN0545G
D
D
S
G
3 - 384