Diodes ZVN0124A - Manual

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=16 Ω
APPLICATIONS
* Telephone handsets
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
240 V
Continuous Drain Current at T amb =25°C I D 160 mA
Pulsed Drain Current I
DM
2 A
Gate Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
240 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V GS(th) 1 3 V ID=1mA, V DS = V GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
10
100 µ A
µ A
V
DS
=240 V, V
GS
=0
V
DS
=192 V, V
GS
=0V,
T=125°C (2)
On-State Drain Current(1) I
D(on)
500 mA V
DS
=25 V, V
GS
=10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
16 Ω V
GS
=10V,I
D
=250mA
Forward Transconductance
(1)(2) g
fs
100 mS V
DS
=25V,I
D
=250mA
Input Capacitance (2) C
iss
85 pF
Common Source Output
Capacitance (2) C
oss
20 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2) C
rss
7 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ 25V, I
D
=250mA
Rise Time (2)(3) t
r
8 ns
Turn-Off Delay Time (2)(3) t
d(off)
16 ns
Fall Time (2)(3) t
f
8 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(
3
E-Line
TO92 Compatible
3-350
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V DS- Drain Source Voltage (Volts)
I D(O
N
)
On
Sta
te
D
ra
in
C
u
rr
en
t(
Am
ps)
1.4
1.2
1.0
0.6
0.2
0
0.4
0.8
1.6
1.8
Transfer Characteristics
Normalised R DS(on) and V GS(th) V Temperature
Temperature (°C)
No
rma
lis
e
d
R
DS(on)
and V
G
S(
th)
0 -60 -40 -20 0 20 40 60 80 100 120 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.4
0.8
Dr
ain
-S
our
ce
Re
si st
an
ce
R D S( on)
Gate Threshold Voltag
e V GS(th)
I D= 0.25A
0 2 4 6 8 10
1.0
0.8
0.6
0.4
0
0.2
0 20 40 60 80 100
80 µ s pulse
2.0
Saturation Characteristics
V DS- Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
V GS -Gate Source Voltage (Volts)
0 2 4 6 8 10
14
12
10
6
2
0
4
8
16
18
20
V DS-
Drain Source
(V
olts)
R
DS(ON
)
-D
ra
in
So
u
rce
Res
ist
a
n
ce
(
Ω
)
Voltage Saturation Characteristics
V GS -Gate Source Voltage (Volts)
1.4
1.2
1.0
0.6
0.2
0
0.4
0.8
1.6
1.8
0 2 4 6 8 10
2.0
V GS= 10V
8V
6V
5V
4V
3V
2V
V GS= 10V
7V
5V
4V
3V
2V
I D=
1A
500mA
100mA
V DS= 25V
V DS= 10V
I
D(
o
n ) -
On
-Sta
te
D
ra
in
C
u
rr
en
t (
Am
p
s
)
I D(
O
N)
-
On-
St
a
te Dr
ain
Cu
rr
e
nt
(
Amp
s)
V GS -Gate Source Voltage (Volts)
V GS= 10V
I D= 1mA
V GS= V DS
1
1 10
100
10
20
I D=
1A
500mA
I00mA
ZVN0124A ZVN0124A
3-351