beautypg.com

Diodes ZVN0545A User Manual

Zvn0545a, N-channel enhancement mode vertical dmos fet

background image

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 450

Volts

V

DS

*

R

DS(on)

= 50

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

V

DS

450

V

Continuous Drain Current at T

amb

=25°C

I

D

90

mA

Pulsed Drain Current

I

DM

600

mA

Gate-Source Voltage

V

GS

±

20

V

Power Dissipation at T

amb

=25°C

P

tot

700

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Drain-Source Breakdown
Voltage

BV

DSS

450

V

I

D

=1mA, V

GS

=0V

Gate-Source Threshold
Voltage

V

GS(th)

1

3

V

ID=1mA, V

DS

= V

GS

Gate-Body Leakage

I

GSS

20

nA

V

GS

=

±

20V, V

DS

=0V

Zero Gate Voltage Drain
Current

I

DSS

10
400

µ

A

µ

A

V

DS

=450 V, V

GS

=0

V

DS

=405 V, V

GS

=0V,

T=125°C

(2)

On-State Drain Current(1)

I

D(on)

150

mA

V

DS

=25 V, V

GS

=10V

Static Drain-Source On-State
Resistance (1)

R

DS(on)

50

V

GS

=10V,I

D

=100mA

Forward
Transconductance(1)(2)

g

fs

100

mS

V

DS

=25V,I

D

=100mA

Input Capacitance (2)

C

iss

70

pF

Common Source Output
Capacitance (2)

C

oss

10

pF

V

DS

=25 V, V

GS

=0V, f=1MHz

Reverse Transfer Capacitance
(2)

C

rss

4

pF

Turn-On Delay Time (2)(3)

t

d(on)

7

ns

V

DD

25V, I

D

=100mA

Rise Time (2)(3)

t

r

7

ns

Turn-Off Delay Time (2)(3)

t

d(off)

16

ns

Fall Time (2)(3)

t

f

10

ns

(
1

E-Line

TO92 Compatible

ZVN0545A

3-357

D

G

S