Diodes ZVN0540A - Manual

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 400 Volt V
DS
* R
DS(on)
=50 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
400 V
Continuous Drain Current at T
amb
=25°C I
D
90 mA
Pulsed Drain Current I
DM
600 mA
Gate-Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
400 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1 3 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
400
µ A
µ A
V
DS
=400 V, V
GS
=0
V
DS
=320 V, V
GS
=0V,
T=125°C (2)
On-State Drain Current(1) I
D(on)
150 mA V
DS
=25 V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
50 Ω V
GS
=10V,I
D
=100mA
Forward Transconductance(1)(2
)
g
fs
100 mS V
DS
=25V,I
D
=100mA
Input Capacitance (2) C
iss
70 pF
Common Source Output
Capacitance (2)
C
oss
10 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
4 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ 25V, I
D
=100mA Rise Time (2)(3) t
r
7 ns
Turn-Off Delay Time (2)(3) t
d(off)
16 ns
Fall Time (2)(3) t
f
10 ns
(
1
E-Line
TO92 Compatible
ZVN0540A
3-356
D
G
S