Zxmn6a08k, Maximum ratings, Thermal characteristics – Diodes ZXMN6A08K User Manual
Page 2
ZXMN6A08K
Document Revision: 2
2 of 8
July 2009
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Diodes Incorporated
ZXMN6A08K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
60 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 3)
I
D
7.90
A
T
A
=70
°C (Note 3)
6.30
(Note 2)
5.36
Pulsed Drain current
V
GS
= 10V
(Note 4)
I
DM
24.3 A
Continuous Source current (Body diode)
(Note 3)
I
S
9.0 A
Pulsed Source current (Body diode)
(Note 4)
I
SM
24.3 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
4.13
33.0
W
mW/
°C
(Note 3)
8.94
71.5
(Note 5)
2.12
16.9
Thermal Resistance, Junction to Ambient
(Note 2)
R
θJA
30.3
°C/W
(Note 3)
14.0
(Note 5)
59.1
Thermal Resistance, Junction to Lead
(Note 6)
R
θJL
2.77
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t
≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).