Diodes ZXMN6A08G - Manual (Page 4)

ZXMN6A08G
Issue 1 - May 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
60 V I
D
= 250
␮A, V
GS
=0V
Zero gate voltage drain
current I
DSS
0.5
␮A
V
DS
= 60V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold
voltage V
GS(th)
1 V I
D
= 250 ␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
R
DS(on)
0.080
⍀
V
GS
= 10V, I
D
= 4.8A
0.150
⍀
V
GS
= 4.5V, I
D
= 4.2A
Forward transconductance
(*) (‡)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
␮
s; duty cycle
Յ
2%.
g
fs
6.6 S V
DS
= 15V, I
D
= 4.8A
Dynamic
(‡)
Input capacitance C
iss
459 pF V
DS
= 40V, V
GS
=0V
f=1MHz
Output capacitance C
oss
44.2 pF
Reverse transfer capacitance C
rss
24.1 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time t
d(on)
2.6 ns V
DD
= 30V, I
D
= 1.5A
R
G
≅6.0⍀, V
GS
= 10V
Rise time t
r
2.1 ns
Turn-off delay time t
d(off)
12.3 ns
Fall time t
f
4.6 ns
Gate charge Q
g
4.0 nC V
DS
= 30V, V
GS
= 5V
I
D
= 1.4A
Total gate charge Q
g
5.8 nC V
DS
= 30V, V
GS
= 10V
I
D
= 1.4A
Gate-source charge Q
gs
1.4 nC
Gate drain charge Q
gd
1.9 nC
Source-drain diode
Diode forward voltage
(*) V
SD
0.88 1.2 V T
j
=25°C, I
S
= 4A,
V
GS
=0V
Reverse recovery time
(‡) t
rr
19.2 ns Tj=25°C, I
S
= 1.4A,
di/dt=100A/ ␮s
Reverse recovery charge
(‡) Q
rr
30.3 nC