Diodes ZVN4206G - Manual (Page 4)

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TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
Transfer Characteristics
2 4 6 8 10 0 10 20 30 40 50
Saturation Characteristics
V DS-
Dr
ai
n S
o
u
rc
e
V
o
ltage (
V
o
lt
s )
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts) V GS- Gate Source Voltage (Volts)
V DS - Drain Source Voltage (Volts)
0 2 4 6 8 10
6
4
0
2
I D
- D
ra
in
C
u
rr
e
nt (Amps)
V DS= 10V
0
10
6
2
4
8
0 2 4 6 8 10
I D=
3A
1.5A
0.5A
I D
- D
ra
in
C
urr
e
nt (Amps)
I D
- Drain Curre
n t (
A
mps)
On-resistance v drain current
I D- Drain Current (Amps)
R
DS
(on)
-D
ra
in
So
u
rc
e
On
R
esi
sta
nce
(
Ω )
0.1 1.0 10
4.5V
6V
V
GS =3.5V 8V 10V
0.1
10
1.0
Normalised R DS(on) and V GS(th) v Temperature
T j -Junction Temperature (°C)
Normalised R
D
S (o
n)
a
nd
V
G
S (th)
-50 -25 0 25 50 75 100 150 125 175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-S
ou
rc e R
es
istan
ce R
DS(
on )
Gate Threshold Voltage V
GS(TH)
I D= 1.5A
V GS= 10V
I D= 1mA
V GS= V DS
2.6
225
0
4
2
6
10
8
10V
8V
9V
7V
5V
4V
6V
4.5V
3.5V
V GS=
20V
12V
14V
16V
5V
4V
10V
8V
6V
9V
7V
4.5V
3.5V
V GS=
20V
12V
14V
16V
0
4
2
6
10
8
20V
14V
TYPICAL CHARACTERISTICS
Transconductance v drain current
I D - Drain Current (Amps )
g fs
-T
ra
n
sc
o
ndu
c ta
nce (mS)
g fs
-T
rans
c o
n ducta
n
ce (
m
S)
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Ca
p
a
c
ita
nce (pF)
Q-Charge (nC)
Transconductance v gate-source voltage
V GS -Gate Source Voltage (Volts)
V
G
S
-G
a te
So
urc
e
V
oltage (V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V DS =
20V
I D= 1.5A
40V 60V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0 1 2 3 4 5 6 7 8 9 10
V DS= 10V
0
300
200
100
400
800
700
600
500
900
1000
0 1 2 3 4 5 6 7 8 9 10
V DS= 10V
0
300
200
100
400
800
700
600
500
900
1000
C oss
C iss
C rss
0 10 20 30 40 50 60 70 80
0
120
80
40
160
200
ZVN4206G ZVN4206G