Diodes ZVN3306A - Manual

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
* R
DSon)
=5 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T amb =25°C I D 270 mA
Pulsed Drain Current I
DM
3 A
Gate-Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
0.8 2.4 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
0.5
50 µ A
µ A
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I D(on) 750 mA V DS =18V, V GS =10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
5 Ω V
GS
=10V,I
D
=500mA
Forward Transconductance(1)(2
) g fs 150 mS V DS =18V,I D =500mA
Input Capacitance (2) C
iss
35 pF
Common Source Output
Capacitance (2) C
oss
25 pF V
DS
=18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2) C
rss
8 pF
Turn-On Delay Time (2)(3) t
d(on)
5 ns
V DD
≈ 18V, I D =500mA
Rise Time (2)(3) t
r
7 ns
Turn-Off Delay Time (2)(3) t
d(off)
6 ns
Fall Time (2)(3) t f 8 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(
2) Sample test.
E-Line
TO92 Compatible
ZVN3306A
3-375
D
G
S
TYPICAL CHARACTERISTICS
V DS - Drain Source Voltage (Volts)
I D(O
n
)
-On-State Drain Curren
t (Amps)
Transfer Characteristics
Saturation Characteristics
V
DS-
Drain Source
V
oltage (V
olts)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
I D=
1A
0.5A
0.25A
I D(
O
n
)
-On-
S
tat
e
Drain Cur
re
n
t (
Am
ps)
V GS -Gate Source Voltage (Volts)
0.6
0
0.2
0.4
0.8
0 2 4 6 8 10
1.0
V GS= 10V
5V
7V
8V
6V
4V
3V
9V
Normalised R DS(on) and V GS(th) vs Temperature
Nor
m
ali
s
e
d
R
DS(on)
a
nd V
G
S(
th
)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai n-S
ou
rc
e R
es ista
nc
e R DS(
on )
Gate Threshold Vo
ltage V
GS(th)
I D=- 0.5A
T-Temperature (C°)
0.4
-80 -60
0.6
0
0.2
0.4
0.8
0 2 4 6 8 10
1.0
6
0
2
4
8
0 2 4 6 8 10
10
On-resistance vs gate-source voltage
V GS -Gate Source Voltage (Volts)
R
DS
(O
N)
-D
ra
in So
urc
e
Res
is
ta
n
c
e
(
Ω
)
1 10 20
1
10
5
Transconductance v drain current
I D(on) - Drain Current (Amps )
g fs
-Fo
rwar
d
T
ra
nsc
o
ndu
cta
nce (mS)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
V DS= 18V
60
40
20
80
160
140
120
100
180
200
V DS= 10V
I D=
1A
0.5A
0.25A
ZVN3306A
3-376