Diodes ZXMN3G32DN8 - Manual

Issue 1 - January 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex features low on-
resistance and fast switching speed.
Features
• Low on-resistance
• 4.5V gate drive capability
• Fast switching bullet
Applications
• DC-DC Converters
• Power management functions
• Motor Control
• Backlighting
Ordering information
Device marking
ZXMN
3G32D
V
(BR)DSS
R
DS(on)
(
Ω)
I
D
(A)
30 0.028 @ V
GS
= 10V 7.1
0.045 @ V
GS
= 4.5V 5.6
DEVICE Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN3G32DN8TA 7 12 500
D2
S2
G2
D1
S1
G1
D1 S1
G1
S2
G2
D1
D2
D2