Diodes ZXMN3A03E6 - Manual (Page 2)

ZXMN3A03E6
S E M I C O N D U C T O R S
ISSUE 3 - OCTOBER 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R θJA 113 °C/W
Junction to ambient
(b)
R θJA 73 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 ␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DSS
30 V
Gate source voltage V
GS
20 V
Continuous drain current V
GS
=10V; T
A
=25°C (b)
V
GS
=10V; T
A
=70°C (b)
V
GS
=10V; T
A
=25°C
(a)
I
D
4.6
3.7
3.7 A
Pulsed drain current (c) I
DM
17 A
Continuous source current (body diode)
(b)
I
S
2.6 A
Pulsed source current (body diode) (c) I
SM
17 A
Power dissipation at T
A
=25°C (a)
Linear derating factor
P
D
1.1
8.8 W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
1.7
13.6
W
mW/°C
Operating and storage temperature range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.