Zxmn3a01e6 – Diodes ZXMN3A01E6 User Manual
Page 2
ZXMN3A01E6
ISSUE 2 - JULY 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
113
°C/W
Junction to Ambient (b)
R
θ
JA
70
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10
s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
30
V
Gate Source Voltage
VGS
20
V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
ID
3.0
2.4
2.4
A
Pulsed Drain Current (c)
IDM
10
A
Continuous Source Current (Body Diode) (b)
IS
2.4
A
Pulsed Source Current (Body Diode) (c)
ISM
10
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.