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Diodes ZXMN2B03E6 User Manual

Summary description, Features, Applications

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Issue 1 - September 2006

1

www.zetex.com

© Zetex Semiconductors plc 2006

ZXMN2B03E6
20V SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability

Summary

Description

This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.

Features

Low on-resistance

Fast switching speed

Low gate drive capability

SOT23-6 package

Applications

DC-DC converters

Power management functions

Disconnect switches

Motor control

Ordering information

Device marking

2B3

V

(BR)DSS

R

DS(on)

(

)

I

D

(A)

20

0.040 @ V

GS

= 4.5V

5.4

0.055 @ V

GS

= 2.5V

4.6

0.075 @ V

GS

= 1.8V

4.0

Device

Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMN2B03E6TA

7

8

3,000

D

S

G

D

D

G

Top view

D

D

S