Diodes ZXMN2A04DN8 - Manual (Page 4)

ZXMN2A04DN8
ISSUE 1 - JULY 2004
4 S E M I C O N D U C T O R S
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS 20 V I
D
=250 ␮A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS 0.5
␮A V
DS
=20V, V
GS
=0V
Gate-Body Leakage I
GSS 100
nA V
GS
= Ϯ12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th) 0.7
V I
D
=250 ␮A, V
DS
= V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.025
0.035
Ω
⍀ V
GS
=4.5V, I
D
=5.9A
V
GS
=2.5V, I
D
=5A
Forward Transconductance (3) g
fs 40
S V
DS
=10V,I
D
=5.9A
DYNAMIC
(3)
Input Capacitance C
iss 1880 pF
V
DS
=10V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss 506 pF
Reverse Transfer Capacitance C
rss 386
pF
SWITCHING (2) (3)
Turn-On Delay Time t
d(on) 7.9
ns
V
DD
=10V, I
D
=1A
R
G
≅6⍀, V
GS
=5V
Rise Time t
r 14.8 ns
Turn-Off Delay Time t
d(off) 50.5 ns
Fall Time t
f 30.6
ns
Gate Charge Q
g 22.1
nC V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge Q
g 40.5
nC
V
DS
=10V,V
GS
=4.5V,
I
D
=5.9A
Gate-Source Charge Q
gs 5.6 nC
Gate-Drain Charge Q
gd 8.0 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD 0.85 0.95
V T
J
=25°C, I
S
=5.1A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr 18.0 ns T
J
=25°C, I
F
=1.9A,
di/dt= 100A/ µs Reverse Recovery Charge
(3)
Q
rr 8.9 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width =300␮s. Duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.