Diodes ZXM64N02X - Manual (Page 4)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
20 V I
D
=250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 µ A V
DS
=20V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
G S
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage V
G S(th)
0.7 V I
D
=250
µ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1) R
DS(on)
0.040
0.050 Ω
Ω
V
G S
=4.5V, I
D
=3.8A
V
G S
=2.7V, I
D
=1.9A
Forward Transconductance (3) g
fs
6.1 S V
DS
=10V,I
D
=1.9A
DYNAMIC (3)
Input Capacitance C
iss
1100 pF
V
DS
=15 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
350 pF
Reverse Transfer Capacitance C
rss
100 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
5.7 ns
V
DD
=10V, I
D
=3.8A
R
G
=6.2 Ω , R
D
=2.6 Ω
(Refer to test
circuit)
Rise Time t
r
9.6 ns
Turn-Off Delay Time t
d(off)
28.3 ns
Fall Time t
f
11.6 ns
Total Gate Charge Q
g
16 nC
V
DS
=16V,V
GS
=4.5V,
I
D
=3.8A
(Refer to test
circuit)
Gate-Source Charge Q
gs
3.5 nC
Gate Drain Charge Q
gd
5.4 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.95 V T
j
=25°C, I
S
=3.8A,
V
G S
=0V
Reverse Recovery Time (3) t
rr
23.7 ns T
j
=25°C, I
F
=3.8A,
di/dt= 100A/
µ
s
Reverse Recovery Charge(3) Q
rr
13.3 nC
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
4
ZXM64N02X
I ssue 2 - February 2008