Electrical characteristics, A product line of diodes incorporated – Diodes ZXTN04120HP5 User Manual
Page 4
POWERDI is a registered trademark of Diodes Incorporated.
ZXTN04120HP5
Document number: DS36618 Rev. 3 - 2
4 of 7
January 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN04120HP5
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
140 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 11)
BV
CEO
120 — — V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
14 — — V
I
E
= 100µA
Collector-Base Cutoff Current
I
CBO
—
—
—
100
10
nA
µA
V
CB
= 120V
V
CB
= 120V, T
A
= +120°C
Collector-Emitter Cutoff Current
I
CES
— — 100 nA
V
CE
= 120V
Emitter Cutoff Current
I
EBO
— — 100 nA
V
EB
= 8V
DC Current Gain (Note 11)
h
FE
2,000
5,000
2,000
500
—
—
—
—
—
—
100,000
—
—
I
C
= 50mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
Collector-Emitter Saturation Voltage (Note 11)
V
CE(sat)
—
—
—
—
1
1.5
V
I
C
= 250mA, I
B
= 0.25mA
I
C
= 1A, I
B
= 1mA
Base-Emitter Saturation Voltage (Note 11)
V
BE(sat)
— — 1.8 V
I
C
= 1A, I
B
= 1mA
Base-Emitter Turn-On Voltage (Note 11)
V
BE(on)
— — 1.7 V
I
C
= 1A, V
CE
= 5V
Input Capacitance (Note 11)
C
ibo
— 90 — pF
V
EB
= 0.5V, f = 1MHz
Output Capacitance (Note 11)
C
obo
— 15 — pF
V
CB
= 10V, f = 1MHz
Current Gain-Bandwidth Product (Note 11)
f
T
150 — — MHz
V
CE
= 10V, I
C
= 100mA,
f=20MHz
Turn-On Time
t
on
— 0.5 — µs
V
CC
= 10V, I
C
= 500mA
I
B1
= -I
B2
= 0.5mA
Turn-Off Time
t
off
— 1.6 — µs
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.