Diodes ZTX705 User Manual
Diodes Hardware
PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 3 MAY 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 3K at I
C
=1 Amp
* P
tot
=1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX704
ZTX705
UNIT
Collector-Base Voltage
V
CBO
-120
-140
V
Collector-Emitter Voltage
V
CEO
-100
-120
V
Emitter-Base Voltage
V
EBO
-10
V
Peak Pulse Current
I
CM
-4
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
= 25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX704
ZTX705
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120
-140
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-100
-120
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10
-10
V
I
E
=-100
µ
A
Collector Cut-Off
Current
I
CBO
-0.1
-10
-0.1
-10
µ
A
µ
A
µ
A
µ
A
V
CB
=-100V
V
CB
=-120V
V
CB
=-100V,
T
amb
=100°C
V
CB
=-120V,
T
amb
=100°C
Collector Cut-Off
Current
I
CES
-10
-10
µ
A
V
CES
=-80V
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
µ
A
V
EB
=-8V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.3
-2.5
-1.3
-2.5
V
V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.8
-1.8
V
I
C
=-1A, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.7
-1.7
V
IC=-1A, V
CE
=-5V*
ZTX704
ZTX705
3-250
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
ZTX704
ZTX705
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static Forward
Current Transfer
Ratio
h
FE
3K
3K
3K
2K
30K
3K
3K
3K
2K
30K
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition
Frequency
f
T
160 Typical
160 Typical MHz
I
C
=-100mA, V
CE
=-10V
f=20MHz
Input Capacitance
C
ibo
90 Typical
90 Typical
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance C
obo
15 Typical
15 Typical
pF
V
CE
=-10V, f=1MHz
Switching Times
t
on
0.6 Typical
0.6 Typical
µ
s
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
t
off
0.8 Typical
0.8 Typical
µ
s
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T
amb
(
max
)
=
Power
(
max
)
−
Power
(
act
)
0.0057
+
25°C
T
amb(max )
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
ZTX704
ZTX705
Voltage Derating Graph
V
CE
- Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
R
5
= 22K
Ω
1
10
100
DC Conditions
R
5
= 100K
Ω
R
5
= 1M
Ω
R
5
=
∞
Max
im
um
Pow
er
Di
ss
ipat
ion (
W
)
3-251