Diodes ZXGD3006E6 - Manual (Page 6)

ZXGD3006E6
Document Number DS35229 Rev. 4 - 2
6 of 8
www.diodes.com
June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3006E6
0 100 200 300 400 500 600 700 800
0
5
10
15
V
IN
= 0 to 15V
V
CC
= 15V
V
EE
= 0V
R
IN
= 1k 
C
L
= 10nF
R
L
= 0.18 
R
SOURCE
= 0 
R
SINK
= 0 
V
OUT
Symmetric Source and Sink Resistors
V
o
ltage (
V
)
Time (ns)
V
IN
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-20
-15
-10
-5
0
5
10
15
20
V
IN
= -18 to 20V
V
CC
= 20V
V
EE
= -18V
R
IN
= 1k 
C
L
= 10nF
R
L
= 0.18 
R
SOURCE
= 4.7 
R
SINK
= 0 
Asymmetric Source and Sink Resistors
V
IN
V
OUT
V
o
ltage (V
)
Time (  s)
Circuit Examples
ZXGD3006 driving a MOSFET
Application example of the ZXGD3006 driving the gate of a
MOSFET from 0 to +15V with R
SOURCE
= R
SINK
= 0Ω
Switching Time Characteristic
ZXGD3006 driving an IGBT
Application example of ZXGD3006 driving the gate of an IGBT with
independent t
on
and t
off
using asymmetric R
SOURCE
and R
SINK
In
addition, the gate is driven negative to -18V to prevent dV/dt induced
false triggering.
Switching Time Characteristic