Diodes ZXGD3003E6 - Manual (Page 4)

ZXGD3003E6
Issue 2 - October 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Switching time test circuits Timing diagram
Parameter Symbol Min. Typ. Max. Unit Conditions
Output voltage, high V
OH
V
CC
– 0.4 V I
source
= 1
␮A
Output voltage, low V
OL
0.4 V I
sink
= 1 ␮A
Source output leakage
current I
L(source)
1
␮A
V
CC
= 40V,
V
IN1
= V
IN2
= 0V
Sink output leakage
current I
L(sink)
1
␮A
V
CC
= 40V,
V
IN1
= V
IN2
= V
CC
Quiescent current I
Q
20 nA V
CC
= 32V,
V
IN1
= V
IN2
= 0V
Source output current I
(source)
1 1.6 A I
IN1
+I
IN2
= 10mA
Sink output current I
(sink)
1 1.4 A I
IN1
+I
IN2
= 10mA
Source output current I
(source)PK
5 A I
IN1
+I
IN2
= 500mA
Sink output current I
(sink)PK
5 A I
IN1
+I
IN2
= 500mA
Gate driver
switching times t
d(rise)
t
r
t
d(fall)
t
f
1.8
8.9
1.7
8.9
ns
ns
ns
ns
C
L
=1nF, R
L
=1
⍀,
V
CC
=12V, V
IN
=10V,
R
S
=25
⍀
Gate driver
switching times t
d(rise)
t
r
t
d(fall)
t
f
4
77
4
85
ns
ns
ns
ns
C
L
=1nF, R
L
=1
⍀,
V
CC
=12V, V
IN
=10V,
R
S
=1k
⍀