Diodes ZXGD3002E6 - Manual (Page 4)

ZXGD3002E6
Issue 1 - October 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Switching Time Test Circuits Timing Diagram
Parameter Symbol Min. Typ. Max. Unit Conditions
Output voltage, high V
OH
V
CC
–
0.4
V I
SOURCE
= 1
␮A
Output voltage, low V
OL
0.4 V I
SINK
= 1 ␮A
Source output leakage
current I
L(source)
1
␮A
V
CC
= 20V,
V
IN1
= V
IN2
= 0V
Sink output leakage
current I
L(sink)
1
␮A
V
CC
= 20V,
V
IN1
= V
IN2
= V
CC
Quiescent current I
Q
50 nA V
CC
= 16V,
V
IN1
= V
IN2
= 0V
Source output current I
(source)
1.6 2.2 A I
IN1
+ I
IN2
= 10mA
Sink output current I
(sink)
1.4 2.0 A I
IN1
+ I
IN2
= 10mA
Source output current I
(source)PK
9 A I
IN1
+ I
IN2
= 1A
Sink output current I
(sink)PK
9 A I
IN1
+ I
IN2
= 1A
Gate driver
switching times t
d(rise)
t
r
t
d(fall)
t
f
1.25
8.3
1.6
10.8
ns
ns
ns
ns
C
L
=1nF, R
L
=1
⍀,
V
CC
=12V, V
IN
=10V,
R
S
=25 ⍀
Gate driver
switching times t
d(rise)
t
r
t
d(fall)
t
f
3.6
105
6.9
115
ns
ns
ns
ns
C
L
=1nF, R
L
=1
⍀,
V
CC
=12V, V
IN
=10V,
R
S
=1k ⍀