Diodes ZXTN5551FL - Manual (Page 3)

ZXTN5551FL
Issue 1 - August 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
180 270 V I
C
= 100
␮A
Collector-emitter
breakdown voltage (base
open) BV
CEO
160 200 V I
C
= 1mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
6 7.85 V I
E
= 10
␮A
Collector cut-off current I
CBO
<1 50 nA V
CB
= 120V
50
␮A
V
CB
= 120V, T
amb
= 100°C
Collector-emitter saturation
voltage V
CE(sat)
65 150 V I
C
= 10mA, I
B
= 1mA (*)
115 200 V I
C
= 50mA, I
B
= 5mA (*)
Base-emitter saturation
voltage V
BE(sat)
760 1000 mV I
C
= 10mA, I
B
= 1mA (*)
840 1200 mV I
C
= 50mA, I
B
= 5mA (*)
Static forward current
transfer ratio h
FE
80 135 I
C
= 1mA, V
CE
= 5V (*)
80 145 250 I
C
= 10mA, V
CE
= 5V (*)
30 65 I
C
= 50mA, V
CE
= 5V (*)
Transition frequency f
T
130 MHz I
C
= 10mA, V
CE
= 10V,
f = 100MHz
Output capacitance C
OBO
6 pF V
CB
= 10V, f = 1MHz (*)
Small signal h
FE
50 260 I
C
= 10mA, V
CE
= 10V,
f=1kHz (†)
(†) Periodic sample test only
Delay time t
(d)
95 ns V
CC
= 10V, I
C
= 10mA, I
B1
=
I
B2
= 1mA
Rise time t
(r)
64 ns
Storage time t
(s)
1256 ns
Fall time t
(f)
140 ns