Electrical characteristics, A product line of diodes incorporated – Diodes ZXTN10150DZ User Manual
Page 4
ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
4 of 7
November 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN10150DZ
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
150 300 -
V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 5)
BV
CEO
150 175 -
V I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.3 -
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
- - 50 nA
V
CB
= 150V
Emitter Cut-off Current
I
EBO
- - 50 nA
V
EB
= 7V
Static Forward Current Transfer Ratio (Note 5)
h
FE
200
60
100
450
180
150
-
-
-
-
I
C
= 30mA, V
CE
= 5V
I
C
= 85mA, V
CE
= 0.20V
I
C
= 150mA, V
CE
= 0.25V
Base-Emitter Turn-On Voltage (Note 5)
V
BE(on)
- 0.701
0.95 V I
C
= 150mA, V
CE
= 0.25V
Output Capacitance
C
OBO
- 10 - pF
V
CB
= 10V, f = 1MHz
Current Gain-Bandwidth Product
f
t
- 135 - MHz
V
CB
= 10V, Ic = 10mA,
f = 100MHz
Delay Time
t
(d)
- 625 - ns
V
CC
= 110V, I
C
= 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 0.25V
Rise Time
t
(r)
- 562 -
ns
Storage Time
t
(s)
- 2465 -
ns
Fall Time
t
(f)
- 289 - ns
Storage Time
t
(s)
- 461 - ns
V
CC
= 110V, I
C
= 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 4V
Fall Time
t
(f)
- 52 - ns
Notes:
5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤ 2%