Diodes ZTX658 - Manual

NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – APRIL 2002
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
APPLICATIONS
* Telephone dialler circuits
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
400 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
1 A
Continuous Collector Current I
C
500 mA
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T j :T stg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
400 V I
C
=100 µ A
Collector-Emitter
Breakdown Voltage V (BR)CEO) 400 V I C =10mA*
Emitter-Base
Breakdown Voltage V (BR)EBO 5 V I E =100 µ A
Collector Cut-Off
Current I
CBO
100 nA V
CB
=320V
Collector Cut-Off
Current I
CBO
100 nA V
CE
=320V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage V
CE(sat)
0.3
0.25
0.5 V
V
V I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage V BE(sat) 0.9 V I C =100mA, I B =10mA*
Base-Emitter
Turn On Voltage V
BE(on)
0.9 V IC=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio h
FE
50
50
40 I
C
=1mA, V
CE
=5V*
I C =100mA, V CE =5V*
I
C
=200mA, V
CE
=10V*
E-Line
TO92 Compatible
3-229
ZTX658 ZTX658
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
T
50 MHz I
C
=20mA, V
CE
=20V
f=20MHz
Output capcitance C obo 10 pF V CB =20V, f=1MHz
Switching times t
on
t
off
130
3300 ns
ns I
C
=100mA, V
C
=100V
I
B1
=10mA, I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
C
B
E
-40 0.0001
Derating curve
T -Temperature (°C)
M
ax Po
w
e
r D
is
sipat
io
n
- (
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
rm
a
l R
esis
ta
nce (
°C/
W
)
10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t 1
t P
D=t 1 /t P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient tem
perat
ure
0
D=1 (D.C.)
3-230