Diodes ZTX696B - Manual

E-Line
TO92 Compatible
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt V
CEO
* Gain of 500 at I
C
=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
180 V
Collector-Emitter Voltage V
CEO
180 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
1 A
Continuous Collector Current I
C
0.5 A
Practical Power Dissipation * P
totp
1.5 W
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
180 V I
C
=100 µ A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
180 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5 V I
E
=100 µ A
Collector Cut-Off Current I
CBO
0.1 µ A V
CB
=145V
Emitter Cut-Off Current I
EBO
0.1 µ A V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.2
0.2
0.25
V
V
V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 V I
C
=200mA, I
B
=5mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9 V I
C
=200mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
500
150
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
ZTX696B
3-247
ZTX696B
3-248
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
T
70 MHz I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance C
ibo
200 pF V
EB
=0.5V, f=1MHz
Output Capacitance C
obo
6 pF V
CE
=10V, f=1MHz
Switching Times t
on
t
off
80
4400
ns
ns
I
C
=100mA, I
B!
=10mA
I
B2
=10mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.