Diodes ZTX457 User Manual
Ztx457
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25°C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
µ
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
300
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
µ
A
Collector Cut-Off
Current
I
CBO
100
10
nA
µ
A
V
CB
=200V
V
CB
=200V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1
V
IC=100mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
50
50
25
300
I
C
=10mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
Transition Frequency
f
T
75
MHz
I
C
=50mA, V
CE
=10V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
E-Line
TO92 Compatible
3-181
ZTX457
C
B
E