Diodes SXTA42 User Manual
Sxta42, Sot89 npn silicon planar high voltage transistor
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
✪
COMPLEMENTARY TYPE SXTA92
PARTMARKING DETAIL
SID
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25°C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
µ
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
V
I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6
V
I
E
=100
µ
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
µ
A
V
CB
=200V, I
E
=0
Emitter Cut-Off Current
I
EBO
0.1
µ
A
V
EB
=6V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=20mA, I
B
=2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=20mA, I
B
=2mA*
Static Forward Current
Transfer Ratio
h
FE
25
40
40
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
Transition
Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMTA42 datasheet.
SXTA42
C
C
B
E
SOT89
3 - 306