Diodes ZX5T953G - Manual (Page 4)

ZX5T953G
Datasheet Number: DS33425 Rev. 4 - 2
4 of 7
www.diodes.com
November 2012
© Diodes Incorporated
ZX5T953G
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-140 -160 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage BV
CER
-140 -160 - V I
C
= -1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
-100 -115 - V I
C
= -1mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.1 - V I
E
= -100µA
Collector-Base Cutoff Current I
CBO
-
<1
-
-20
-0.5
nA
µA
V
CB
= -100V
V
CB
= -100V, T
A
= +100°C
Collector-Emitter Cutoff Current
I
CER
R ≤ 1kΩ
-
<1
-
-20
-0.5
nA
µA V
CB
= -100V
V CB = -100V, T A = +100°C
Emitter Cutoff Current I
EBO
- <1 -10 nA V
EB
= -6V
Static Forward Current Transfer Ratio (Note 10) h
FE
100 250 -
-
I
C
= -10mA, V
CE
= -1V
100 200 300 I
C
= -1A, V
CE
= -1V
25 50 - I
C
= -3A, V
CE
= -1V
15 30 - I
C
= -4A, V
CE
= -1V
- 5 - I
C
= -10A, V
CE
= -1V
Collector-Emitter Saturation Voltage (Note 10) V CE(sat)
- -20 -30
mV
I C = -100mA, I B = -10mA
- -70 -90 I
C
= -1A, I
B
= -100mA
- -120 -150 I
C
= -2A, I
B
= -200mA
- -240 -340 I C = -4A, I B = -400mA
Base-Emitter Saturation Voltage (Note 10) V
BE(sat)
- -985 -1100 mV I
C
= -4A, I
B
= -400mV
Base-Emitter Turn-On Voltage (Note 10) V
BE(on)
- -920 -1050 mV I
C
= -4A, V
CE
= -2V
Output Capacitance (Note 10) C obo
- 42 - pF V CB = -10V. f = 1MHz
Transition Frequency f
T
- 125 - MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
Switching Time
t on
- 42 -
ns
V
CC
= -10V, I
C
= -1A
I
B1
= I
B2
= -100mA t
off
- 540 -
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%