Zx5t853g – Diodes ZX5T853G User Manual
Page 4

ZX5T853G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
200
235
V
I
C
=100
A
Collector-emitter breakdown voltage
BV
CER
200
235
V
I
C
=1
A, RBՅ1k⍀
Collector-emitter breakdown voltage
BV
CEO
100
115
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8.1
V
I
E
=100
A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
=150V
V
CB
=150V,T
amb
=100
ЊC
Collector cut-off current
I
CER
R
Յ 1k⍀
20
0.5
nA
A
V
CB
=150V
V
CB
=150V,T
amb
=100
ЊC
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
21
50
95
180
35
65
125
220
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=100mA*
I
C
=5A, I
B
=500mA*
Base-emitter saturation voltage
V
BE(SAT)
1020
1120
mV
I
C
=5A, I
B
=500mA*
Base-emitter turn-on voltage
V
BE(ON)
920
1000
mV
I
C
=5A, V
CE
=2V*
Static forward current transfer ratio
H
FE
100
100
30
10
230
200
60
20
300
I
C
=10mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition frequency
f
T
130
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
26
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
41
1010
ns
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
Յ 300s; duty cycle Յ2%.