Diodes ZXTN4000Z - Manual (Page 2)

ZXTN4000Z
Datasheet Number: DS35676 Rev. 1 - 2
2 of 5
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN4000Z
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V EBO
7 V
Continuous Collector Current I
C
1 A
Peak Pulse Current (Note 4) I
CM
3 A
Base Current I B
500 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 83 °C/W
Thermal Resistance, Junction to Leads (Note 6) R θJL 28 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
Thermal Characteristics and Derating information