Electrical characteristics (@tamb = 25°c), Zxtn2038f, Electrical characteristics (@t – Diodes ZXTN2038F User Manual
Page 3: 25°c)
ZXTN2038F
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© Diodes Incorporated, 2008
www.diodes.com
Electrical characteristics (@T
AMB
= 25°C)
Parameter
Symbol
Min.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V
(BR)CBO
80
V
I
C
=100
A
Collector-emitter breakdown
voltage
V
(BR)CEV
80
V
I
C
=100
A,
0.3V > V
BE
> -1V
Collector-emitter breakdown
voltage
V
(BR)CEO
60
V
I
C
=10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width=300
S. Duty cycle
Յ2%
Spice parameter data is available upon request for this device
Emitter-base breakdown voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector-emitter cut-off current
I
CES
100
nA
V
CE
=60V
Collector-base cut-off current
I
CBO
100
nA
V
CB
=60V
Emitter-base cut-off current
I
EBO
100
nA
V
EB
=4V
Static forward current transfer
ratio
h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
(*)
I
C
=1A, V
CE
=5V
(*)
I
C
=2A, V
CE
=5V
(*)
Collector-emitter saturation
voltage
V
CE(sat)
0.2
0.25
0.5
V
V
V
I
C
=100mA, I
B
=2mA
(*)
I
C
=500mA,
I
B
=50mA
(*)
I
C
=1A, I
B
=100mA
(*)
Base-emitter saturation voltage
V
BE(sat)
1.1
V
I
C
=1A, I
B
=100mA
(*)
Base-emitter turn-on voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=5V
(*)
Transition frequency
f
T
150
I
C
=50mA, V
CE
=10V
f=100MHz
Output capacitance
C
obo
10
pF
V
CB
=10V, f=1MHz