Diodes ZXTN2018F - Manual (Page 4)

ZXTN2018F
Issue 2 - September 2005 4 www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
140 180 V I
C
=100 ␮A
Collector-emitter breakdown
voltage V
(BR)CEV
140 180 V I
C
=1 ␮A,
-1V < V
BE
< +0.3V
Collector-emitter breakdown
voltage V
(BR)CEO
60 80 V
I
C
=10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300
␮
S. Duty cycle
Յ
2%.
Emitter-base breakdown
voltage V
(BR)EBO
7 8 V I
E
=100 ␮A
Collector-emitter cut-off
current I
CEV
<1 20 nA V
CE
=110V,
V
BE
= -1V
Collector-base cut-off current I
CBO
<1 20 nA V
CB
=110V
Emitter-base cut-off current I
EBO
<1 10 nA V
EB
=6V
Static forward current transfer
ratio H
FE
100
100
40
15
220
200
65
25
300
I
C
=10mA, V
CE
=1V
(a)
I
C
=2A, V
CE
=1V
(a)
I
C
=5A, V
CE
=1V
(a)
I
C
=10A, V
CE
=1V
(a)
Collector-emitter saturation
voltage V
CE(sat)
15
35
40
85
145
170
30
45
55
110
170
210
mV
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA
(a)
I
C
=1A, I
B
=100mA
(a)
I
C
=1A, I
B
=50mA
(a)
I
C
=2A, I
B
=50mA
(a)
I
C
=5A, I
B
=250mA
(a)
I
C
=6A, I
B
=300mA
(a)
Base-emitter saturation voltage V
BE(sat)
0.92 1.00 V
I
C
=5A, I
B
=250mA
(a)
Base-emitter turn-on voltage V
BE(on)
0.85 0.95 V
I
C
=5A, V
CE
=1V
(a)
Transition frequency f
T
130 MHz Ic=100mA, V
CE
=10V,
f=50MHz
Output capacitance C
obo
28 pF V
CB
=10V, f=1MHz
Turn-on time t
(on)
33 ns V
CC
=10V, I
C
=1A,
Turn-off time t
(off)
668 ns I
B1
=I
B2
=100mA