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Zxtn2010g, Thermal resistance, Absolute maximum ratings – Diodes ZXTN2010G User Manual

Page 2

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ZXTN2010G

S E M I C O N D U C T O R S

ISSUE 2 - MAY 2006

2

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient

(a)

R

⍜JA

42

°C/W

NOTES

(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.

(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

THERMAL RESISTANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Collector-base voltage

BV

CBO

150

V

Collector-emitter voltage

BV

CEO

60

V

Emitter-base voltage

BV

EBO

7

V

Continuous collector current

(a)

I

C

6

A

Peak pulse current

I

CM

20

A

Power dissipation at T

A

=25°C

(a)

Linear derating factor

P

D

3.0

24

W

mW/°C

Power dissipation at T

A

=25°C

(b)

Linear derating factor

P

D

1.6

12.8

W

mW/°C

Operating and storage temperature range

T

j

, T

stg

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS