Diodes ZXTP722MA - Manual (Page 4)

ZXTP722MA
Document Number DS31885 Rev. 5 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP722MA
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV CBO
-70 -150 - V I
C = -100µA
Collector-Emitter Breakdown Voltage (Note 6) BV
CEO
-70 -125 - V I
C
= -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.5 - V I
E
= -100µA
Collector Cutoff Current I CBO
- - -100 nA V CB = -55V
Emitter Cutoff Current I
EBO
- - -100 nA V
EB
= -6V
Collector Emitter Cutoff Current I
CES
- - -100 nA V
CES
= -55V
Static Forward Current Transfer Ratio (Note 6) h FE
300
300
175
40
-
470
450
275
60
10
-
-
-
-
-
-
I
C
= -10mA, V
CE
= -5V
I C = -100mA, V CE = -5V
I C = -1A, V CE = -5V
I
C
= -1.5A, V
CE
= -5V
I
C
= -3A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 6) V CE(sat)
-
-
-
- -35
-135
-140
-175
-50
-200
-220
-270
mV
I
C
= -0.1A, I
B
= -10mA
I
C
= -0.5A, I
B
= -20mA
I C = -1A, I B = -100mA
I C = -1.5A, I B = -200mA
Base-Emitter Turn-On Voltage (Note 6) V
BE(on)
- -0.78 -1.00 V I
C
= -1.5A, V
CE
= -5V
Base-Emitter Saturation Voltage (Note 6) V
BE(sat)
- -0.94 -1.05 V I
C
= -1.5A, I
B
= -200mA
Output Capacitance C obo
- 14 20 pF V CB = -10V. f = 1MHz
Transition Frequency f
T
150 180 - MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-On Time t on
- 40 - ns V
CC
= -50V, I
C
= -1A
I
B1
= I
B2
= -50mA Turn-Off Time t
off
- 700 - ns
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.