Electrical characteristics, A product line of diodes incorporated – Diodes ZX5T1951G User Manual
Page 4
ZX5T1951G
Datasheet Number: DS35304 Rev. 4 - 2
4 of 7
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T1951G
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-90 -120 -
V I
C
= -100µA
Collector-Emitter Breakdown Voltage
BV
CES
-90 -120 -
V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
-60 -80 -
V I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8 - V
I
E
= -100µA
Collector-Base Cutoff Current
I
CBO
- <1
-50 nA
V
CB
= -72V
Collector-Emitter Cutoff Current
I
CES
- <1
-50 nA
V
CB
= -72V
Emitter Cutoff Current
I
EBO
- <1
-10 nA
V
EB
= -6V
Static Forward Current Transfer Ratio (Note 6)
h
FE
100 240 -
-
I
C
= -10mA, V
CE
= -2V
100 180 300
I
C
= -2A, V
CE
= -2V
40 70 -
I
C
= -5A, V
CE
= -2V
5 14 -
I
C
= -10A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 6)
V
CE(sat)
- -16
-30
mV
I
C
= -100mA, I
B
= -10mA
- -55
-95
I
C
= -1A, I
B
= -100mA
- -85
-130
I
C
= -2A, I
B
= -200mA
- -200
-260
I
C
= -5A, I
B
= -500mA
Base-Emitter Saturation Voltage (Note 6)
V
BE(sat)
- -1
-1.15 V
I
C
= -5A, I
B
= -500mV
Base-Emitter Turn-On Voltage (Note 6)
V
BE(on)
- -0.89
-1.0 V I
C
= -5A, V
CE
= -2V
Output Capacitance (Note 6)
C
obo
- 33 70 pF
V
CB
= -10V. f = 1MHz
Transition Frequency
f
T
- 120 - MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
Switching Time
t
on
- 33 80
ns
V
CC
= -10V, I
C
= -2A
I
B1
= -I
B2
= -200mA
t
off
- 215
300
Notes:
6. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%