Diodes ZDT6702 - Manual (Page 3)

PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80 -120 V I
C
=-100 µ A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-60 -90 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10 -15 V I
E
=-100 µ A
Collector Cutoff
Current
I
CBO
-0.5 -10
-10
nA
µ A
V
CB
=-60V
V
CB
=-60V, T
amb
=100°C
Emitter Cutoff Current I
EBO
-0.1 -10 nA V
EB
=-8V
Collector-Emitter
Cutoff Current
I
CES
-50 -500 nA V
CE
=-60V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.86
-1.05
-1.0
-1.28
V
V
I
C
=-0.5A, I
B
=-0.5mA*
I
C
=-1.75A, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.7 -1.9 V I
C
=-1.75A, I
B
=-2mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.55 -1.85 V I
C
=-1.75A, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
2K
2K
1.5K
1K
8K
8K
7K
4K
I
C
=-10mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-4A, V
CE
=-5V*
Transition Frequency f
T
140 MHz I
C
=-100mA, V
CE
=-10V
f=100MHz
Input Capacitance C
ibo
90 pF V
EB
=-0.5V, f=1MHz
Output Capacitance C
obo
25 pF V
CE
=-10V, f=1MHz
Switching Times t
on
0.75 µ s I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
t
off
1.2 µ s
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
ZDT6702