Diodes ZDT6753 - Manual (Page 3)

PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120 V I
C
=-100 µ A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-100 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V I
E
=-100 µ A
Collector Cutoff
Current
I
CBO
-0.1
-10
µ A
µ A
V
CB
=-100V
V
CB
=-100V, T amb =100°C
Emitter Cutoff Current I
EBO
-0.1 µ A V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.17
-0.30
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.90 -1.25 V I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-0.8 -1.0 V I
C
=-1A, V
CE
=-2V*
Static Forward
Current Transfer Ratio
h
FE
70
100
55
25
200
200
170
55
300
I
C
=-50mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency f
T
100 140 MHz I
C
=-100mA, V
CE
=5V
f=100MHz
Output Capacitance C
obo
30 pF V
CE
=-10V, f=1MHz
Switching Times t
on
40 ns I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=50mA
t
off
600 ns
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
For typical characteristics graphs see FZT753 datasheet.
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
120 V I
C
=100 µ A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
100 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5 V I
E
=100 µ A, I
C
=0
Collector Cutoff
Current
I
CBO
0.1
10
µ A
µ A
V
CB
=100V
V
CB
=100V, T
amb
=100°C
Emitter Cutoff Current I
EBO
0.1 µ A V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.13
0.23
0.3
0.5
V I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 1.25 V I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8 1 V I
C
=1A, V
CE
=2V*
Static Forward
Current Transfer Ratio
h
FE
70
100
55
25
200
200
110
55
300
I
C
=50mA, V
CE
=2V
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency f
T
140 175 MHz I
C
=100mA, V
CE
=5V
f=100MHz
Output Capacitance C
obo
30 pF V
CB
=10V, f=1MHz
Switching Times t
on
80 ns I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=50mA
t
off
1200 ns
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
For typical characteristics graphs see FZT653 datasheet.
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