Diodes ZXTP2008Z - Manual (Page 4)

ZXTP2008Z
ISSUE 1 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-50 -70 V I
C
= -100 ␮A
Collector-emitter breakdown voltage BV
CER
-50 -70 V I
C
= -1 ␮A, RB <1k⍀
Collector-emitter breakdown voltage BV
CEO
-30 -40 V I
C
= -10mA *
Emitter-base breakdown voltage BV
EBO
-7.0 -8.0 V I
E
= -100 ␮A
Collector cut-off current I
CBO
<-1 -20
-0.5
nA
␮A
V
CB
= -40V
V
CB
= -40V,T
amb
=100°C
Collector cut-off current I
CER
R <1k ⍀
<-1 -20
-0.5
nA
␮A
V
CB
= -40V
V
CB
= -40V,T
amb
=100°C
Emitter cut-off current I
EBO
<-1 -10 nA V
EB
= -6V
Collector-emitter saturation voltage V
CE(SAT)
-25
-35
-55
-55
-130
-40
-55
-80
-80
-175
mV
mV
mV
mV
mV
I
C
= -0.5A, I
B
= -20mA *
I
C
= -1A, I
B
= -100mA *
I
C
= -1A, I
B
= -20mA *
I
C
= -2A, I
B
= -200mA *
I
C
= -5.5A, I
B
=-500mA *
Base-emitter saturation voltage V
BE(SAT)
-970 -1070 mV I
C
= -5.5A, I
B
= -500mA *
Base-emitter turn-on voltage V
BE(ON)
-860 -960 mV I
C
= -5.5A, V
CE
= -1V *
Static forward current transfer ratio h
FE
100
100
70
10
225
200
145
20
300
I
C
= -10mA, V
CE
= -1V *
I
C
= -1A, V
CE
= -1V *
I
C
= -5A, V
CE
= -1V *
I
C
= -20A, V
CE
= -1V *
Transition frequency f
T
110 MHz I
C
= -100mA, V
CE
= -10V
f = 50MHz
Output capacitance C
OBO
83 pF V
CB
= -10V, f = 1MHz *
Switching times t
ON
t
OFF
43
230
ns I
C
= -1A, V
CC
= -10V,
I
B1
= -I
B2
= -100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.