Diodes ZXTD09N50DE6 - Manual (Page 2)

ZXTD09N50DE6
Document number DS33650 Rev. 5 - 2
2 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD09N50DE6
Maximum Ratings – Q1 & Q2 Common
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I
C
1 A
Peak Pulse Current I
CM
2 A
Base current I
B
200 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
P
D
0.7
5.6
W
mW/ °C
(Notes 7 & 10)
0.9
7.2
(Notes 7 & 11)
1.1
8.8
(Notes 8 & 10)
1.1
8.8
(Notes 9 & 10)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 6 & 10)
R
θJA
179
°C/W
(Notes 7 & 10) 139
(Notes 7 & 11) 113
(Notes 8 & 10) 113
(Notes 9 & 10) 73
Thermal Resistance, Junction to Lead (Note 12) R
θJL
95.50
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note (6), except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as note (8), except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active dice running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).