Diodes ZXT12N50DX - Manual (Page 4)

ISSUE 1 - MARCH 2000
ZXT12N50DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
100 200 V I
C
=100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
50 65 V I
C
=10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
7.5 8.5 V I
E
=100 ␮A
Collector Cut-Off Current I
CBO
100 nA V
CB
=80V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=6V
Collector Emitter Cut-Off Current I
CES
100 nA V
CES
=80V
Collector-Emitter Saturation
Voltage V
CE(sat)
11
95
190
135
13
120
250
175
mV
mV
mV
mV I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
I
C
=3A, I
B
=300mA*
Base-Emitter Saturation Voltage V
BE(sat)
0.9 0.95 V I
C
=3A, I
B
=50mA*
Base-Emitter Turn-On Voltage V
BE(on)
0.83 0.9 V I
C
=3A, V
CE
=2V*
Static Forward Current Transfer
Ratio h
FE
250
300
150
50
400
450
250
100
900
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
Transition Frequency f
T
132 MHz I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance C
obo
26 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
115 ns V
CC
=10V, I
C
=1A
I
B1
=I
B2
=20mA
Turn-Off Time t
(off)
1000 ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
4