Diodes ZXT10P40DE6 - Manual (Page 4)

ISSUE 1 - SEPTEMBER 2000
ZXT10P40DE6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
-40 -80 V I
C
=-100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
-40 -70 V I
C
=-10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 -8.8 V I
E
=-100 ␮A
Collector Cut-Off Current I
CBO
-100 nA V
CB
=-35V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V
Collector Emitter Cut-Off Current I
CES
-100 nA V
CES
=-35V
Collector-Emitter Saturation
Voltage V
CE(sat)
-25
-150
-195
-210
-40
-220
-300
-300
mV
mV
mV
mV I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter Saturation Voltage V
BE(sat)
-0.95 -1.00 V I
C
=-2A, I
B
=-200mA*
Base-Emitter Turn-On Voltage V
BE(on)
-0.85 -0.95 V I
C
=-2A, V
CE
=-2V*
Static Forward Current Transfer
Ratio h
FE
300
300
180
60
12
480
450
290
130
22
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-1.5A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
Transition Frequency f
T
150 190 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
19 25 pF V
CB
=-10V, f=1MHz
Turn-On Time t
(on)
40 ns V
CC
=-15V, I
C
=-0.75A
I
B1
=I
B2
=-15mA
Turn-Off Time t
(off)
435 ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
4