Diodes ZX5T3Z - Manual (Page 4)

ZX5T3Z
Da
tasheet Number: DS33419 Rev. 2 - 2
4 of 7
www.diodes.com
May 2013
© Diodes Incorporated
ZX5T3Z
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-50 -90 — V I
C
= -100µA
Collector-Emitter Breakdown Voltage BV
CES
-50 -90 — V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 12) BV CEO
-40 -58 — V I C = -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7.5 -8.3 — V I
E
= -100µA
Collector Cutoff Current I
CBO
— <1 -20 nA V
CB
= -40V
Collector Cutoff Current I
CES
— <1 -20 nA V
CE
= -32V
Emitter Cutoff Current I
EBO
— <1 -20 nA V
EB
= -6V
DC Current Transfer Static Ratio (Note 12) h
FE
200
200
170
110 390
350
290
175 —
550
—
—
—
I C = -10mA, V CE = -2V
I
C
= -0.5A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -5.5A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 12) V
CE(SAT)
—
—
—
-15
-44
-50
-120
-70
-125
-130
-162
-30
-60
-70
-165
-80
-175
-175
-185
mV
I
C
= -0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I C = -1A, I B = -50mA
I
C
= -1A, I
B
= -10mA
I
C
= -2A, I
B
= -200mA
I
C
= -2A, I
B
= -40mA
I
C
= -3.5A, I
B
= -175mA
I
C
= -5.5A, I
B
= -550mA
Base-Emitter Saturation Voltage (Note 12) V
BE(SAT)
—
-820
-1000
-900
-1075
V
I
C
= -2A, I
B
= -40mA
I
C
= -5.5A, I
B
= -550mA
Base-Emitter Turn-On Voltage (Note 12) V
BE(ON)
—
-778
-869 -850
-950
V
I C = -2A, V CE = -2V
I
C
= -5.5A, V
CE
= -2V
Transitional Frequency f T
— 152 — MHz
I
C
= -50mA, V
CE
= -10V
f = 100MHz
Output Capacitance C
obo
— 53 — pF V
CB
= -10V, f = 1MHz,
Switching Times
t
d
—
18
— nS
I C
= -1A, V
CC
= -10V
I
B1
= -I
B2
= -100mA
t
r
17
t
s
325
t f
60
Switching Times
t
d
—
55
— nS
I
C
= -2A, V
CC
= -30V
I B1 = -I B2 = -20mA
t r
107
t
s
264
t
f
103
Note: 12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.