Diodes ZUMT619 - Manual

Super323
 
SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE
2 - DECEMBER 2008
FEATURES
*
500mW POWER DISSIPATION
* I
C
CONT 1A
* 2A Peak Pulse Current
* Excellent H
FE
Characteristics Up To 2A (pulsed)
* Extremely Low Equivalent On Resistance; R
CE(sat)
APPLICATIONS
*
LCD backlighting inverter circuits
* Boost functions in DC-DC converters
DEVICE TYPE COMPLEMENT PARTMARKING R
CE(sat)
ZUMT619 ZUMT720 T63 160m
Ω
at 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current** I
CM
2 A
Continuous Collector Current I
C
1.0 A
Base Current I
B
200 mA
Power Dissipation at T
amb
=25°C P
tot
385 †
500 ‡ mW
Operating and Storage Temperature
Range T
j
:T
stg
-55 to +150 °C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT619