Diodes ZTX449 User Manual
Ztx449, Npn silicon planar medium power transistor, Typical characteristics

NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 30 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
= 25°C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
50
V
I
C
=100
µ
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30
V
IC=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
µ
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
10
µ
A
µ
A
V
CB
=40V
V
CB
=40V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
0.1
µ
A
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
1
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.25
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
1
V
IC=1A,V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
80
40
300
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
E-Line
TO92 Compatible
ZTX449
3-173
C
B
E
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
a
t)
- (V
olts)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
V
BE
(sa
t)
- (V
olts)
V
BE
(o
n
)
- (
V
o
lt
s
)
I
C
-
Co
lle
c
to
r Cur
re
nt
(
Am
ps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
10
100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
40
80
120
160
200
0
10
0.2
0.4
0.6
0.8
Switching Speeds
I
C
-
Collector Current (Amps)
S
w
itching
t
im
e
0.001
0.01
0.1
1
I
C
/I
B
=10
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ts
ns
tf,tr,td
ns
100
50
150
0
V
CE
=2V
0
I
C
/I
B
=10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
V
CE
=2V
ts
tf
td
tr
800
400
200
600
0
0.001
1
0.01
0.1
10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
0.001
1
0.01
0.1
10
0.001
1
0.01
0.1
10
0.1
V
CE
=10V
ZTX449
3-174