Diodes ZXTP717MA - Manual (Page 4)

ZXTP717MA
Document Number DS31881 Rev. 5 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP717MA
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV CBO
-20 -35 - V I
C = -100 µA
Collector-Emitter Breakdown Voltage (Note 7) BV
CEO
-12 -25 - V I
C
= -10 mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.5 - V I
E
= -100 µA
Collector Cutoff Current I CBO
- - -100 nA V CB = -16V
Emitter Cutoff Current I
EBO
- - -100 nA V
EB
= -6V
Collector Emitter Cutoff Current I
CES
- - -100 nA V
CES
= -10V
Static Forward Current Transfer Ratio (Note 7) h
FE
300
300
180
60
45
475
450
275
100
70
-
-
-
-
-
-
I
C
= -10mA, V
CE
= -2V
I C = -100mA, V CE = -2V
I
C
= -2.5A, V
CE
= -2V
I
C
= -8A, V
CE
= -2V
I
C
= -10A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 7) V CE(sat)
-
-
-
-
- -10
-100
-100
-195
-240
-17
-140
-150
-300
-310
mV
I
C
=- 0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -10mA
I C = -1.5A, I B = -50mA
I C = -3A, I B = -50mA
I
C
= -4A, I
B
= -150mA
Base-Emitter Turn-On Voltage (Note 7) V
BE(on)
- -0.87 -0.96 V I
C
= -4A, V
CE
= -2V
Base-Emitter Saturation Voltage (Note 7) V
BE(sat)
- -0.97 -1.07 V I
C
= -4A, I
B
= -150mA
Output Capacitance C
obo
- 21 30 pF V
CB
= -10V. f = 1MHz
Transition Frequency f
T
100 110 - MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-On Time t on
- 70 - ns V
CC
= -6V, I
C
= -2A
I
B1
= I
B2
= -50mA Turn-Off Time t
off
- 130 - ns
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.