Diodes ZXTP2006E6 - Manual (Page 4)

ZXTP2006E6
ISSUE 1 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-25 -49 V I
C
= -100 ␮A
Collector-emitter breakdown voltage BV
CEO
-20 -43 V I
C
= -10mA *
Emitter-base breakdown voltage BV
EBO
-7.5 -8.4 V I
E
= -100 ␮A
Collector cut-off current I
CBO
-100 nA V
CB
= -20V
Collector cut-off current I
CES
-100 nA V
CB
= -20V
Emitter cut-off current I
EBO
-100 nA V
EB
= -6V
Collector-emitter saturation voltage V
CE(SAT)
-10
-100
-110
-15
-140
-130
mV
mV
mV
I
C
= -0.1A, I
B
= -10mA*
I
C
= -1A, I
B
= -10mA*
I
C
= -3.5A, I
B
= -350mA*
Base-emitter saturation voltage V
BE(SAT)
-0.96 -1.1 V I
C
= -3.5A, I
B
= -350mA*
Base-emitter turn-on voltage V
BE(ON)
-0.8 -0.9 V I
C
= -3.5A, V
CE
= -2V *
Static forward current transfer ratio h
FE
300
300
150
10
575
450
285
40
900
I
C
= -10mA, V
CE
= -2V *
I
C
= -1A, V
CE
= -2V *
I
C
= -3.5A, V
CE
= -2V *
I
C
= -10A, V
CE
= -2V *
Transition frequency f
T
110 I
C
= -50mA, V
CE
= -10V
f = 50MHz
Output capacitance C
OBO
45 pF V
CB
= -10V, f = 1MHz *
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.