Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25020DFH User Manual
Page 4
ZXTN25020DFH
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector emitter breakdown
voltage (base open)
BV
CEO
20
35
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8
V
I
E
= 100
A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
5
6
V
I
E
= 100mA,
Emitter base breakdown voltage BV
EBO
7
8.3
V
I
E
= 100mA
Collector cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 100V
V
CB
= 100V, T
AMB
= 100°C
Collector emitter cut-off current
I
CEX
-
100
nA
V
CE
= 100V; R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector emitter saturation
voltage
V
CE(sat)
35
43
mV
I
C
= 1A, I
B
= 100mA
55
70
mV
I
C
= 1A, I
B
= 20mA
90
110
mV
I
C
= 2A, I
B
= 40mA
125
170
mV
I
C
= 2A, I
B
= 20mA
125
150
mV
I
C
= 4,5A, I
B
= 450mA
205
265
mV
I
C
= 4.5A, I
B
= 90mA
Base emitter saturation voltage
V
BE(sat)
900
1000
mV
I
C
= 4.5A, I
B
= 90mA
Base emitter turn-on voltage
V
BE(on)
820
900
mV
I
C
= 4.5A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
300
450
900
I
C
= 10mA, V
CE
250
380
I
C
= 2A, V
CE
= 2V
120
170
I
C
= 4.5A, V
CE
= 2V
15
I
C
= 15A, V
CE
= 2V
Transition frequency
f
T
215
MHz I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance
C
OBO
16.5
25
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
(d)
68
ns
V
CC
= 10V. I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time
t
(r)
72
ns
Storage time
t
(s)
361
ns
Fall time
t
(f)
64
ns