Diodes ZXTN25015DFH - Manual (Page 2)

ZXTN25015DFH
Issue 1 - May 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
40 V
Collector-emitter voltage (forward blocking) V
CEX
30 V
Collector-emitter voltage V
CEO
15 V
Emitter-collector voltage (reverse blocking) V
ECO
4.5 V
Emitter-base voltage V
EBO
7 V
Continuous collector current
(c) I
C
5 A
Peak pulse current I
CM
15 A
Power dissipation at T
amb
= 25°C
(a) P
D
0.73 W
Linear derating factor 5.84 mW/°C
Power dissipation at T
amb
= 25°C
(b) P
D
1.05 W
Linear derating factor 8.4 mW/°C
Power dissipation at T
amb
= 25°C
(c) P
D
1.25 W
Linear derating factor 9.6 mW/°C
Power dissipation at T
amb
= 25°C
(d) P
D
1.81 W
Linear derating factor 14.5 mW/°C
Operating and storage temperature range T
j
, T
stg
- 55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a) R ⍜JA 171 °C/W
Junction to ambient
(b) R ⍜JA 119 °C/W
Junction to ambient
(c) R
⍜JA
100 °C/W
Junction to ambient
(d) R ⍜JA 69 °C/W