Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25012EFL User Manual
Page 4
ZXTN25012EFL
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
20
40
V
I
C
= 100
A
Collector-emitter breakdown
voltage
BV
CEO
12
17
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
Emitter-base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8
V
I
E
= 100
A, R
BC
Յ
1k
⍀ or
0.25v > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
4.5
5.5
V
I
E
= 100
A,
Collector cut-off current
I
CBO
<1
50
nA
V
CB
= 16V
20
A V
CB
= 16V, T
amb
= 100°C
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
50
65
mV
I
C
= 1A, I
B
= 100mA
70
85
mV
I
C
= 1A, I
B
= 10mA
105
130
mV
I
C
= 2A, I
B
= 40mA
235
300
mV
I
C
= 5A, I
B
= 100mA
Base-emitter saturation
voltage
V
BE(sat)
830
950
mV
I
C
= 2A, I
B
= 40mA
Base-emitter turn-on voltage
V
BE(on)
745
850
mV
I
C
= 2A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
500
800
1500
I
C
= 10mA, V
CE
= 2V
500
700
I
C
= 1A, V
CE
= 2V
370
575
I
C
= 2A, V
CE
= 2V
210
335
I
C
= 5A, V
CE
= 2V
30
55
I
C
= 15A, V
CE
= 2V
Transition frequency
f
T
260
MHz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Output capacitance
C
obo
25
35
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
(d)
71
ns
V
CC
= 10V
I
C
= 1A,
I
B1
= I
B2
= 10mA
Rise time
t
(r)
70
ns
Storage time
t
(s)
233
ns
Fall time
t
(f)
72
ns