Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN19020DG User Manual
Page 4
ZXTN19020DG
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
70
100
V
I
C
= 100
A
Collector-Emitter
breakdown voltage
(forward blocking)
BV
CEX
70
100
V
I
C
= 100
A, R
BE
< 1k
Ω
or
-1V < V
BE
< 0.25V
Collector-Emitter
breakdown voltage
BV
CEO
20
30
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECX
6
8.4
V
I
E
= 100
A, R
BC
< 1k
Ω
or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
4.5
5.7
V
I
E
= 100
A
Emitter-Base breakdown
voltage
BV
EBO
7
8.4
V
I
E
= 100
A
Collector-Base cut-off
current
I
CBO
<1
50
0.5
nA
A
V
CB
= 70V
V
CB
= 70V, T
amb
= 100°C
Collector-Emitter cut-off
current
I
CEX
100
nA
V
CE
= 70V, R
BE
< 1k
Ω or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
27
50
80
63
85
200
35
70
100
80
110
250
mV
mV
mV
mV
mV
mV
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 20mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 400mA
I
C
= 9A, I
B
= 450mA
Base-Emitter saturation
voltage
V
BE(sat)
1040
1150
mV
I
C
= 9A, I
B
= 450mA
Base-Emitter turn-on
voltage
V
BE(on)
910
1050
mV
I
C
= 9A, V
CE
= 2V
Static forward current
transfer ratio
h
FE
300
260
130
50
450
390
175
75
30
900
I
C
= 100mA, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 9A, V
CE
= 2V
I
C
= 15A, V
CE
I
C
= 20A, V
CE
Transition frequency
f
T
160
MHz
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Input capacitance
C
ibo
297
400
pF
V
EB
= 0.5V, f
= 1MHz
Output capacitance
C
obo
32.6
40
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
129
ns
I
C
= 1A, V
CC
= 10V,
I
B1
=- I
B2
= 10mA
Rise time
t
r
96
ns
Storage time
t
s
398
ns
Fall time
t
f
90
ns