Diodes ZXTN07012EFF - Manual (Page 4)

ZXTN07012EFF
Issue 1 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
20 40 V IC = 100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
12 17 V I
C
= 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
7 8.3 V I
E
= 100
␮A
Emitter-collector breakdown
voltage (reverse blocking) BV
ECX
6 8.2 V I
E
= 100
␮A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open) BV
ECO
3.0 5.3 V I
E
= 100 ␮A,
Collector-base cut-off current I
CBO
<1 50
20 nA
␮A
V
CB
= 16V
V
CB
= 16V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<1 50 nA V
EB
= 5.6V
Collector-emitter saturation
voltage V
CE(sat)
25 40 mV I
C
= 100mA, I
B
= 0.5mA (*)
60 85 mV I
C
= 1A, I
B
= 10mA (*)
50 70 mV I
C
= 1A, I
B
= 100mA (*)
105 150 mV I
C
= 2A, I
B
= 20mA (*)
215 320 mV I
C
= 4.5A, I
B
= 45mA (*)
Base-emitter saturation
voltage V
BE(sat)
945 1050 mV I
C
= 4.5A, I
B
= 45mA (*)
Base-emitter turn-on voltage V
BE(on)
850 950 mV I
C
= 4.5A, V
CE
= 2V (*)
Static forward current
transfer ratio h
FE
500 800 1500 I
C
= 0.1A, V
CE
= 2V (*)
400 650 I
C
= 2A, V
CE
= 2V (*)
330 530 I
C
= 4.5A, V
CE
= 2V (*)
140 230 I
C
= 10A, V
CE
= 2V (*)
Transition frequency f
T
150 220 MHz I
C
= 50mA, V
CE
= 5V
f = 50MHz
Input capacitance C
ibo
229 pF V
EB
= 0.5V, f = 1MHz (*)
Output capacitance C
Obo
40 50 pF V
CB
= 10V, f = 1MHz (*)
Delay time t
d
26.8 ns V
CC
= 10V.
I
C
= 500mA,
I
B1
= I
B2
= 50mA.
Rise time t
r
14.2 ns
Storage time t
s
250 ns
Fall time t
f
67.7 ns